| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201113379407 | 专利类型 | US | 公开（公告）号 | US8957481(B2) | 公开（授权）日 | 2015.02.17 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Zhong Huicai;Yin Haizhou;Luo Zhijiong | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70;H01L27/12;H01L21/8238;H01L21/336;H01L21/308;H01L21/762;H01L29/78;H01L29/66 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | The present application discloses a semiconductor structure and a method for manufacturing the same. Compared with conventional approaches to form contacts, the present disclosure reduces contact resistance and avoids a short circuit between a gate and contact plugs, while simplifying manufacturing process, increasing integration density, and lowering manufacture cost. According to the manufacturing method of the present disclosure, second shallow trench isolations are formed with an upper surface higher than an upper surface of the source/drain regions. Regions defined by sidewall spacers of the gate, sidewall spacers of the second shallow trench isolations, and the upper surface of the source/drain regions are formed as contact holes. The contacts are formed by filling the contact holes with a conductive material. The method omits the steps of etching for providing the contact holes, which lowers manufacture cost. By forming the contacts self-aligned with the gate, the method avoids misalignment and improves performance of the device while reducing a footprint of the device and lowering manufacture cost of the device. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障