| 专利名称 | Transistor and method for forming the same | 申请号 | US201113107860 | 专利类型 | US | 公开（公告）号 | US8952429(B2) | 公开（授权）日 | 2015.02.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Luo Zhijong;Zhu Huilong | 主分类号 | H01L29/772 | IPC主分类号 | H01L29/772;H01L21/265;H01L29/78;H01L29/417 | 专利有效期 | Transistor and method for forming the same 至Transistor and method for forming the same | 法律状态 | 说明书摘要 | The present invention relates to a stress-enhanced transistor and a method for forming the same. The method for forming the transistor according to the present invention comprises the steps of forming a mask layer on a semiconductor substrate on which a gate has been formed, so that the mask layer covers the gate and the semiconductor substrate; patterning the mask layer so as to expose at least a portion of each of a source region and a drain region; amorphorizing the exposed portions of the source region and the drain region; removing the mask layer; and annealing the semiconductor substrate so that a dislocation is formed in the exposed portion of each of the source region and the drain region. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障