| 专利名称 | Semiconductor memory cell, device, and method for manufacturing the same | 申请号 | US201113512643 | 专利类型 | US | 公开（公告）号 | US8927963(B2) | 公开（授权）日 | 2015.01.06 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Huo Zongliang;Liu Ming | 主分类号 | H01L29/06 | IPC主分类号 | H01L29/06;H01L31/00;H01L29/78 | 专利有效期 | Semiconductor memory cell, device, and method for manufacturing the same 至Semiconductor memory cell, device, and method for manufacturing the same | 法律状态 | 说明书摘要 | A semiconductor memory cell, a semiconductor memory device, and a method for manufacturing the same are disclosed. The semiconductor memory cell may comprise: a substrate; a channel region on the substrate; a gate region above the channel region; a source region and a drain region on the substrate and at opposite sides of the channel region; and a buried layer, which is disposed between the substrate and the channel region and comprises a material having a forbidden band narrower than that of a material for the channel region material. The buried layer material has a forbidden band narrower than that of the channel region material, so that a hole barrier is formed in the buried layer. Due to the barrier, it is difficult for holes stored in the buried layer to leak out, resulting in an improved information holding duration of the memory cell utilizing the floating-body effect. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障