| 专利名称 | Method for forming gate structure, method for forming semiconductor device, and semiconductor device | 申请号 | US201213699734 | 专利类型 | US | 公开（公告）号 | US8921171(B2) | 公开（授权）日 | 2014.12.30 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yang Hong;Ma Xueli;Wang Wenwu;Han Kai;Wang Xiaolei;Yin Huaxiang;Yan Jiang | 主分类号 | H01L21/8238 | IPC主分类号 | H01L21/8238;H01L27/092 | 专利有效期 | Method for forming gate structure, method for forming semiconductor device, and semiconductor device 至Method for forming gate structure, method for forming semiconductor device, and semiconductor device | 法律状态 | 说明书摘要 | A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障