| 专利名称 | Semiconductor structure and method for forming the same | 申请号 | US201113201827 | 专利类型 | US | 公开（公告）号 | US8928089(B2) | 公开（授权）日 | 2015.01.06 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70;H01L21/8238;H01L29/78 | 专利有效期 | Semiconductor structure and method for forming the same 至Semiconductor structure and method for forming the same | 法律状态 | 说明书摘要 | A semiconductor structure and a method for forming the same are provided. The structure comprises a semiconductor substrate (100) with an nMOSFET region (102) and a pMOSFET region (104) on it. An nMOSFET structure and a pMOSFET structure are formed in the nMOSFET region (102) and the pMOSFET region (104), respectively. The nMOSFET structure comprises a first channel region (182) formed in the nMOSFET region (102) and a first gate stack formed in the first channel region (182). The nMOSFET structure is covered with a compressive-stressed material layer (130) to apply a tensile stress to the first channel region (182). The pMOSFET structure comprises a second channel region (184) formed in the pMOSFET region (104) and a second gate stack formed in the second channel region (184). The pMOSFET structure is covered with a tensile-stressed material layer (140) to apply a compressive stress to the second channel region (184). |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障