| 专利名称 | Method to realize flux free indium bumping | 申请号 | US201113880451 | 专利类型 | US | 公开（公告）号 | US8900986(B2) | 公开（授权）日 | 2014.12.02 | 申请（专利权）人 | 中国科学院上海微系统与信息技术研究所 | 发明（设计）人 | Huang Qiuping;Luo Le;Xu Gaowei;Yuan Yuan | 主分类号 | H01L21/00 | IPC主分类号 | H01L21/00;H01L23/00;C25D5/10;C25D5/50;C25D5/02;C25D3/46;C25D3/54 | 专利有效期 | Method to realize flux free indium bumping 至Method to realize flux free indium bumping | 法律状态 | 说明书摘要 | A method to realize flux free indium bumping process includes several steps including substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation and Ag layer coating. The method can be used in the occasion for some special application, e.g., the packaging of the photoelectric chip (with optical lens), MEMS and biological detection chip, where the usage of flux is prohibited. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障