| 专利名称 | Al-Sb-Te phase change material used for phase change memory and fabrication method thereof | 申请号 | US201113202953 | 专利类型 | US | 公开（公告）号 | US8920684(B2) | 公开（授权）日 | 2014.12.30 | 申请（专利权）人 | 中国科学院上海微系统与信息技术研究所 | 发明（设计）人 | Peng Cheng;Wu Liangcai;Rao Feng;Song Zhitang;Liu Bo;Zhou Xilin;Zhu Min | 主分类号 | H01B1/02 | IPC主分类号 | H01B1/02;G11C11/56;C23C14/06;C23C14/35;C01B19/00;C23C14/14;H01L45/00;G11C13/00 | 专利有效期 | Al-Sb-Te phase change material used for phase change memory and fabrication method thereof 至Al-Sb-Te phase change material used for phase change memory and fabrication method thereof | 法律状态 | 说明书摘要 |
The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0 |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障