| 专利名称 | Semiconductor field-effect transistor structure and method for manufacturing the same | 申请号 | US201113814973 | 专利类型 | US | 公开（公告）号 | US8895374(B2) | 公开（授权）日 | 2014.11.25 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhou Huajie;Xu Qiuxia | 主分类号 | H01L21/00 | IPC主分类号 | H01L21/00;H01L29/66;H01L21/84;H01L29/78 | 专利有效期 | Semiconductor field-effect transistor structure and method for manufacturing the same 至Semiconductor field-effect transistor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | The present application discloses a semiconductor Field-Effect Transistor (FET) structure and a method for manufacturing the same, wherein the method comprises: forming a semiconductor substrate comprising an SOI structure having a body-contact hole; forming a fin on the SOI structure of the semiconductor substrate; forming a gate stack structure on top and side faces of the fin; forming source/drain structures in the fin on both sides of the gate stack structure; and performing metallization. The present invention makes use of traditional quasi-planar based top-down processes, thus the manufacturing process thereof becomes simple to implement; the present invention exhibits good compatibility with CMOS planar process and can be easily integrated; the present invention also is favorable for suppressing short channel effects desirably, and boosts MOSFETs to develop towards a trend of downscaling size. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障