| 专利名称 | Semiconductor device and method for forming the same | 申请号 | US201113143931 | 专利类型 | US | 公开（公告）号 | US8896062(B2) | 公开（授权）日 | 2014.11.25 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L21/84;H01L21/336;H01L27/088;H01L29/78;H01L29/66 | 专利有效期 | Semiconductor device and method for forming the same 至Semiconductor device and method for forming the same | 法律状态 | 说明书摘要 | The invention provides a semiconductor device, including: a semiconductor base, on an insulation layer; source/drain regions abutting opposite first sides of the semiconductor base; and gates at opposite second sides of the semiconductor base, wherein the semiconductor base includes a cavity, and the insulation layer is exposed by the cavity. The invention also provides a method for forming a semiconductor device, including: forming a semiconductor bottom on an insulation layer; forming source/drain regions, the source/drain regions abutting opposite first sides of the semiconductor bottom; forming gates on opposite second sides of the semiconductor bottom; and removing a part of the semiconductor bottom to form a cavity in the semiconductor bottom, the cavity exposing the insulation layer. With the technical solutions provided by the invention, short-channel effects can be alleviated, and the resistance of the source/drain regions and parasitic capacitance can be reduced. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障