| 专利名称 | Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor | 申请号 | US201113698276 | 专利类型 | US | 公开（公告）号 | US8895403(B2) | 公开（授权）日 | 2014.11.25 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Zhong Huicai;Zhu Huilong | 主分类号 | H01L21/00 | IPC主分类号 | H01L21/00;H01L21/02;H01L27/088;H01L21/8238;H01L21/84;H01L27/12 | 专利有效期 | Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor 至Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor | 法律状态 | 说明书摘要 | A transistor, a method for fabricating a transistor, and a semiconductor device comprising the transistor are disclosed in the present invention. The method for fabricating a transistor may comprise: providing a substrate and forming a first insulating layer on the substrate; defining a first device area on the first insulating layer; forming a spacer surrounding the first device area on the first insulating layer; defining a second device area on the first insulating layer, wherein the second device area is isolated from the first device area by the spacer; and forming transistor structures in the first and second device area, respectively. The method for fabricating a transistor of the present invention greatly reduces the space required for isolation, significantly decreases the process complexity, and greatly reduces fabricating cost. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障