| 专利名称 | Flash memory device and method for manufacturing the same | 申请号 | US201113148265 | 专利类型 | US | 公开（公告）号 | US8878280(B2) | 公开（授权）日 | 2014.11.04 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Yin Haizhou;Luo Zhijiong | 主分类号 | H01L29/788 | IPC主分类号 | H01L29/788;H01L27/115;H01L29/66;H01L21/84;H01L27/12 | 专利有效期 | Flash memory device and method for manufacturing the same 至Flash memory device and method for manufacturing the same | 法律状态 | 说明书摘要 | The present invention provides a FinFET flash memory device and the method for manufacturing the same. The flash memory device is on an insulating layer, comprising: a first fin and a second fin, wherein the second fin is a control gate of the device; a gate dielectric layer, at side walls and top of the first fin and the second fin; source/drain regions, inside the first fin at both sides of a floating gate. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障