| 专利名称 | Semiconductor device and manufacturing method thereof | 申请号 | US201113497249 | 专利类型 | US | 公开（公告）号 | US8816326(B2) | 公开（授权）日 | 2014.08.26 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Huaxiang;Luo Jun;Zhao Chao;Liu Honggang;Chen Dapeng | 主分类号 | H01L29/78 | IPC主分类号 | H01L29/78;H01L29/66;H01L29/778;H01L29/08 | 专利有效期 | Semiconductor device and manufacturing method thereof 至Semiconductor device and manufacturing method thereof | 法律状态 | 说明书摘要 | A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障