| 专利名称 | Semiconductor device having gate structures to reduce the short channel effects | 申请号 | US201113121998 | 专利类型 | US | 公开（公告）号 | US8816392(B2) | 公开（授权）日 | 2014.08.26 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing | 主分类号 | H01L29/66 | IPC主分类号 | H01L29/66;H01L33/00;H01L21/02 | 专利有效期 | Semiconductor device having gate structures to reduce the short channel effects 至Semiconductor device having gate structures to reduce the short channel effects | 法律状态 | 说明书摘要 | A semiconductor device comprises a semiconductor substrate on an insulating layer; and a second gate that is located on the insulating layer and is embedded at least partially in the semiconductor substrate. A method for forming a semiconductor device comprises: forming a semiconductor substrate on an insulating layer; forming a void within the semiconductor substrate, with the insulating layer being exposed by the void; and forming a second gate, with the void being filled with at least one part of the second gate. It facilitates the reduction of the short channel effects, resistances of the source and drain regions, and parasitic capacitances. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障