| 专利名称 | Well region formation method and semiconductor base | 申请号 | US201113381636 | 专利类型 | US | 公开（公告）号 | US8815698(B2) | 公开（授权）日 | 2014.08.26 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Zhu Huilong;Luo Zhijiong | 主分类号 | H01L27/04 | IPC主分类号 | H01L27/04;H01L21/76;H01L21/8238;H01L29/16;H01L21/8234;H01L29/66 | 专利有效期 | Well region formation method and semiconductor base 至Well region formation method and semiconductor base | 法律状态 | 说明书摘要 | A well region formation method and a semiconductor base in the field of semiconductor technology are provided. A method comprises: forming isolation regions in a semiconductor substrate to isolate active regions; selecting at least one of the active regions, and forming a first well region in the selected active region; forming a mask to cover the selected active region, and etching the rest of the active regions, so as to form grooves; and growing a semiconductor material by epitaxy to fill the grooves. Another method comprises: forming isolation regions in a semiconductor substrate for isolating active regions; forming well regions in the active regions; etching the active regions to form grooves, such that the grooves have a depth less than or equal to a depth of the well regions; and growing a semiconductor material by epitaxy to fill the grooves. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障