| 专利名称 | Fin field-effect transistor and method for manufacturing the same | 申请号 | US201113377141 | 专利类型 | US | 公开（公告）号 | US8859378(B2) | 公开（授权）日 | 2014.10.14 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Zhong Huicai;Zhu Huilong | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L27/12;H01L21/8234;H01L21/84;H01L27/088;H01L29/66 | 专利有效期 | Fin field-effect transistor and method for manufacturing the same 至Fin field-effect transistor and method for manufacturing the same | 法律状态 | 说明书摘要 | Embodiments of the present invention disclose a method for manufacturing a Fin Field-Effect Transistor. When a fin is formed, a dummy gate across the fin is formed on the fin, a spacer is formed on sidewalls of the dummy gate, and a cover layer is formed on the first dielectric layer and on the fin outside the dummy gate and the spacer; then, an self-aligned and elevated source/drain region is formed at both sides of the dummy gate by the spacer, wherein the upper surfaces of the gate and the source/drain region are in the same plane. The upper surfaces of the gate and the source/drain region are in the same plane, making alignment of the contact plug easier; and the gate and the source/drain region are separated by the spacer, thereby improving alignment accuracy, solving inaccurate alignment of the contact plug, and improving device AC performance. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障