| 专利名称 | Method of manufacturing semiconductor device with well etched spacer | 申请号 | US201213700808 | 专利类型 | US | 公开（公告）号 | US8883584(B2) | 公开（授权）日 | 2014.11.11 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Meng Lingkuan | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L29/66 | 专利有效期 | Method of manufacturing semiconductor device with well etched spacer 至Method of manufacturing semiconductor device with well etched spacer | 法律状态 | 说明书摘要 | A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a dielectric layer on the substrate and the gate stack; performing a main etching operation on the dielectric layer to form a spacer, with a remainder of the dielectric layer left on the substrate; and performing an over etching operation to remove the remainder of the dielectric layer. According to the method disclosed herein, two etching operations where an etching gas comprises a helium gas are performed, without forming an etching stop layer of silicon oxide. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障