| 专利名称 | Semiconductor substrate for manufacturing transistors having back-gates thereon | 申请号 | US201113696995 | 专利类型 | US | 公开（公告）号 | US8829621(B2) | 公开（授权）日 | 2014.09.09 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Luo Zhijiong;Yin Haizhou;Zhong Huicai | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70;H01L27/12;H01L21/84;H01L27/092;H01L21/74;H01L21/762;H01L29/786 | 专利有效期 | Semiconductor substrate for manufacturing transistors having back-gates thereon 至Semiconductor substrate for manufacturing transistors having back-gates thereon | 法律状态 | 说明书摘要 |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障