| 专利名称 | Etch-back method for planarization at the position-near-interface of an interlayer dielectric | 申请号 | US201113381005 | 专利类型 | US | 公开（公告）号 | US8828881(B2) | 公开（授权）日 | 2014.09.09 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Meng Lingkkuan;Yin Huaxiang | 主分类号 | H01L21/3065 | IPC主分类号 | H01L21/3065;H01L21/3105;H01L21/768;H01L29/78 | 专利有效期 | Etch-back method for planarization at the position-near-interface of an interlayer dielectric 至Etch-back method for planarization at the position-near-interface of an interlayer dielectric | 法律状态 | 说明书摘要 | The invention discloses an etch-back method for planarization at the position-near-interface of an interlayer dielectric (ILD), comprising: depositing or growing a thick layer of SiO2 by the chemical vapor deposition or oxidation method on a surface of a wafer; spin-coating a layer of SOG and then performing a heat treatment to obtain a relatively uniform stack structure; perform an etch-back on the SOG using a plasma etching, and stopping when approaching the position-near-interface of SiO2; performing a plasma etch-back on the remaining SOG/SiO2 structure at the position-near-interface until achieving a desired thickness. Since a two-step etching at the position-near-interface is employed, an extremely good smooth surface of the ILD is obtained. That is, a planar and tidy surface of the ILD is obtained not only in the center region, but also even at the edge of the wafer. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障