| 专利名称 | Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor | 申请号 | US201113378997 | 专利类型 | US | 公开（公告）号 | US8835316(B2) | 公开（授权）日 | 2014.09.16 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Luo Jun;Zhu Huilong;Luo Zhijiong | 主分类号 | H01L29/772 | IPC主分类号 | H01L29/772;H01L21/3213;H01L21/768;H01L29/78;H01L29/66;H01L29/417;H01L21/285 | 专利有效期 | Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor 至Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor | 法律状态 | 说明书摘要 |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障