| 专利名称 | In-situ fabrication method for silicon solar cell | 申请号 | US201013699739 | 专利类型 | US | 公开（公告）号 | US8871618(B2) | 公开（授权）日 | 2014.10.28 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Xia Yang;Liu Bangwu;Li Chaobo;Liu Jie;Wang Minggang;Li Yongtao | 主分类号 | H01L21/26 | IPC主分类号 | H01L21/26;H01L31/18;C23C14/48;H01L21/223 | 专利有效期 | In-situ fabrication method for silicon solar cell 至In-situ fabrication method for silicon solar cell | 法律状态 | 说明书摘要 | An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障