| 专利名称 | Transistor and method for manufacturing the same | 申请号 | US201113144903 | 专利类型 | US | 公开（公告）号 | US8779514(B2) | 公开（授权）日 | 2014.07.15 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Zhong Huicai;Zhu Huilong | 主分类号 | H01L29/772 | IPC主分类号 | H01L29/772;H01L21/336 | 专利有效期 | Transistor and method for manufacturing the same 至Transistor and method for manufacturing the same | 法律状态 | 说明书摘要 | The invention relates to a transistor and a method for manufacturing the transistor. The transistor according to an embodiment of the invention may comprise: a substrate which comprises at least a back gate of the transistor, an insulating layer and a semiconductor layer stacked sequentially, wherein the back gate of the transistor is used for adjusting the threshold voltage of the transistor; a gate stack formed on the semiconductor layer, wherein the gate stack comprises a gate dielectric and a gate electrode formed on the gate dielectric; a spacer formed on sidewalls of the gate stack; and a source region and a drain region located on both sides of the gate stack, respectively, wherein the height of the gate stack is lower than the height of the spacer. The transistor enables the height of the gate stack to be reduced and therefore the performance of the transistor is improved. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障