| 专利名称 | Semiconductor device and method for manufacturing the same | 申请号 | US201113142591 | 专利类型 | US | 公开（公告）号 | US8772127(B2) | 公开（授权）日 | 2014.07.08 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Zhong Huicai;Zhu Huilong;Luo Zhijiong | 主分类号 | H01L29/772 | IPC主分类号 | H01L29/772 | 专利有效期 | Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same | 法律状态 | 说明书摘要 | The present invention provides a semiconductor device and a method for manufacturing the same. The method for manufacturing the semiconductor device comprises: providing a silicon substrate having a gate stack structure formed thereon and having {100} crystal indices; forming an interlayer dielectric layer coving a top surface of the silicon substrate; forming a first trench in the interlayer dielectric layer and/or in the gate stack structure, the first trench having an extension direction being along <110> crystal direction and perpendicular to that of the gate stack structure; and filling the first trench with a first dielectric layer, wherein the first dielectric layer is a tensile stress dielectric layer. The present invention introduces a tensile stress in the transverse direction of a channel region by using a simple process, which improves the response speed and performance of semiconductor devices. |
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2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障