| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201113256866 | 专利类型 | US | 公开（公告）号 | US8766371(B2) | 公开（授权）日 | 2014.07.01 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | There is provided a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention comprises: a semiconductor substrate; a channel region formed on the semiconductor substrate; a gate stack formed on the channel region; and source/drain regions formed on both sides of the channel region and embedded in the semiconductor substrate. The gate stack comprises: a gate dielectric layer formed on the channel region; and a conductive layer positioned on the gate dielectric layer. For an nMOSFET, the conductive layer has a compressive stress to apply a tensile stress to the channel region; and for a pMOSFET, the conductive layer has a tensile stress to apply a compressive stress to the channel region. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障