| 专利名称 | Method for manufacturing semiconductor field effect transistor | 申请号 | US201113395743 | 专利类型 | US | 公开（公告）号 | US8778744(B2) | 公开（授权）日 | 2014.07.15 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhou Huajie;Xu Qiuxia | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L29/66;H01L29/78 | 专利有效期 | Method for manufacturing semiconductor field effect transistor 至Method for manufacturing semiconductor field effect transistor | 法律状态 | 说明书摘要 | The present disclosure provides a method for manufacturing a semiconductor field effect transistor, comprising: forming a semiconductor substrate having a local Silicon-on-Insulator (SOI) structure, which comprises a local buried isolation dielectric layer; forming a fin on a silicon substrate above the local buried isolation dielectric layer; forming a gate stack structure on a top and on side faces of the fin; forming source/drain structures in the fin at both sides of the gate stack structure; and metallizing. The present disclosure uses a conventional top-to-bottom process based on quasi-plane, which has a good compatibility with CMOS planar processes. Also, the method can suppress short channel effects and help to reduce the dimensions of MOSFETs. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障