| 专利名称 | TCAD emulation calibration method of SOI field effect transistor | 申请号 | US201113696401 | 专利类型 | US | 公开（公告）号 | US8667440(B2) | 公开（授权）日 | 2014.03.04 | 申请（专利权）人 | 中国科学院上海微系统与信息技术研究所 | 发明（设计）人 | CHAI ZHAN;CHEN JING;LUO JIEXIN;WU QINGQING;WANG XI | 主分类号 | G06F9/455 | IPC主分类号 | G06F9/455;G06F17/50 | 专利有效期 | TCAD emulation calibration method of SOI field effect transistor 至TCAD emulation calibration method of SOI field effect transistor | 法律状态 | 说明书摘要 | A calibration method for a device using TCAD to emulation SOI field effect transistor, where process emulation MOS device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; the process emulation MOS device structures are calibrated according to a TEM test result, a SIMS test result, a CV test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Thereby, providing effective guidance for research, development and optimization of a new process flow are realized. |
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