| 专利名称 | Resistive random access memory cell and memory | 申请号 | US201113512797 | 专利类型 | US | 公开（公告）号 | US8642989(B2) | 公开（授权）日 | 2014.02.04 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | LIU QI;LIU MING;LONG SHIBING;LV HANGBING | 主分类号 | H01L45/00 | IPC主分类号 | H01L45/00 | 专利有效期 | Resistive random access memory cell and memory 至Resistive random access memory cell and memory | 法律状态 | 说明书摘要 | A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障