| 专利名称 | Semiconductor device structure and method for manufacturing the same | 申请号 | US201113380975 | 专利类型 | US | 公开（公告）号 | US8652884(B2) | 公开（授权）日 | 2014.02.18 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | ZHONG HUICAI;LIANG QINGQING | 主分类号 | H01L21/335 | IPC主分类号 | H01L21/335;H01L21/70 | 专利有效期 | Semiconductor device structure and method for manufacturing the same 至Semiconductor device structure and method for manufacturing the same | 法律状态 | 说明书摘要 | The present invention proposes a semiconductor device structure and a method for manufacturing the same, and relates to the semiconductor manufacturing industry. The method comprises: providing a semiconductor substrate; forming gate electrode lines on the semiconductor substrate; forming sidewall spacers on both sides of the gate electrode lines; forming source/drain regions on the semiconductor substrates at both sides of the gate electrode lines; forming contact holes on the gate electrode lines or on the source/drain regions; and cutting off the gate electrode lines to form electrically isolated gate electrodes after formation of the sidewall spacers but before completion of FEOL process for a semiconductor device structure. The embodiments of the present invention are applicable for manufacturing integrated circuits. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障