| 专利名称 | High-purity tellurium dioxide single crystal and manufacturing method thereof | 申请号 | US201013262209 | 专利类型 | US | 公开（公告）号 | US8480996(B2) | 公开（授权）日 | 2013.07.09 | 申请（专利权）人 | 中国科学院上海硅酸盐研究所 | 发明（设计）人 | GE ZENGWEIZHU YONGWU GUOGINGYIN XUEJITANG LINYAOZHAO HANBINGU LIZHE | 主分类号 | C01B19/04 | IPC主分类号 | C01B19/04;C30B11/02;C30B15/00 | 专利有效期 | High-purity tellurium dioxide single crystal and manufacturing method thereof 至High-purity tellurium dioxide single crystal and manufacturing method thereof | 法律状态 | 说明书摘要 | A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10-13 g/g. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障