| 专利名称 | Semiconductor device having fins of different heights and method for manufacturing the same | 申请号 | US201113634266 | 专利类型 | US | 公开（公告）号 | US9496178(B2) | 公开（授权）日 | 2016.11.15 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Yin Haizhou;Luo Zhijiong | 主分类号 | H01L29/76 | IPC主分类号 | H01L29/76;H01L21/8234 | 专利有效期 | Semiconductor device having fins of different heights and method for manufacturing the same 至Semiconductor device having fins of different heights and method for manufacturing the same | 法律状态 | 说明书摘要 | The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer; a first fin being formed by patterning the semiconductor layer; and a second fin being formed by patterning the semiconductor layer, wherein: top sides of the first and second fins have the same height; bottom sides of the first and second fins adjoin the semiconductor layer; and the second fin is higher than the first fin. According to the present disclosure, a plurality of semiconductor devices with different dimensions can be integrated on the same wafer. As a result, manufacturing process can be shortened and manufacturing cost can be reduced. Furthermore, devices with different driving capabilities can be provided. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障