| 专利名称 | MOSFET structure and manufacturing method thereof | 申请号 | US201314905440 | 专利类型 | US | 公开（公告）号 | US9496342(B2) | 公开（授权）日 | 2016.11.15 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou | 主分类号 | H01L21/8234 | IPC主分类号 | H01L21/8234;H01L29/10;H01L29/66;H01L29/78;H01L21/02;H01L21/308;H01L29/08;H01L29/165 | 专利有效期 | MOSFET structure and manufacturing method thereof 至MOSFET structure and manufacturing method thereof | 法律状态 | 说明书摘要 | A MOSFET and a method for manufacturing the same are disclosed. The method comprises: a. providing a substrate (100), a dummy gate structure (200), a epitaxial protection layer (101) and a sacrificial spacer (205); b. covering the dummy gate structure (200) and the substrate (100) on one side thereof by a mask layer, and forming a vacancy (102) in the substrate; c. growing a semiconductor layer (300) on the semiconductor structure to fill in the vacancy (102); d. removing the epitaxial protection layer (101) and the sacrificial spacer (205), and sequentially forming source/drain extension regions, a spacer (201), source/drain regions, and an interlayer dielectric layer (500); and e. removing the dummy gate structure (200) to form a dummy gate vacancy, and forming a gate stack in the dummy gate vacancy. In the MOSFET structure of the present disclosure, negative effects of DIBL on device performance can be effectively reduced. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障