| 专利名称 | Mram based on vertical current writing and its control method | 申请号 | US20040599514 | 专利类型 | US | 公开（公告）号 | US2007183186 | 公开（授权）日 | 2007.08.09 | 申请（专利权）人 | 中国科学院物理研究所 | 发明（设计）人 | PENG ZILONG (CN);HAN XIUFENG (CN);ZHAO SUFEN (CN);WANG WEINING (CN);ZHAN WENSHAN (CN) | 主分类号 | G11C11/00 | IPC主分类号 | G11C11/00;G11C7/00;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/00;H01L27/22;G11C11/02;H01L21/70 | 专利有效期 | Mram based on vertical current writing and its control method 至Mram based on vertical current writing and its control method | 法律状态 | 说明书摘要 | The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障