| 专利名称 | Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof | 申请号 | US20030645642 | 专利类型 | US | 公开（公告）号 | US2004155239 | 公开（授权）日 | 2004.08.12 | 申请（专利权）人 | 中国科学院长春应用化学研究所 | 发明（设计）人 | WANG JUN (CN); YAN DONGHANG (CN); ZHANG JIAN (CN) | 主分类号 | H01L35/24 | IPC主分类号 | H01L35/24 | 专利有效期 | Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof 至Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof | 法律状态 | 说明书摘要 | A field effect transistor in sandwiched configuration having organic semiconductor, comprising: a substrate (1), a gate electrode (2) formed on the surface of the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate insulation layer (2), which is characterized in that, further comprising: an active layer (4) formed on the gate insulation layer (3) but leaving a part of the gate insulation layer (3) to be exposed, a source and drain electrodes (5) formed on a part of the gate insulation layer (3) and a part of the active layer (4), and an active layer (6) formed on the exposed part of the gate insulation layer (3), the active layer (4), the source electrode and the drain electrode (5). Taking full advantage of that the organic semiconductor can be processed under low temperature, the present invention adopts two or more kinds of materials to form the active semiconductor layer to make the active layer good contact with the source/drain electrode more effectively and reduce the threshold voltage of the device, and contact the semiconductor with the source/drain electrode and the insulation layer closely and tightly. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障