| 专利名称 | Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof | 申请号 | US20030614987 | 专利类型 | US | 公开（公告）号 | US6806492 | 公开（授权）日 | 2004.10.19 | 申请（专利权）人 | 中国科学院长春应用化学研究所 | 发明（设计）人 | YAN XUANJUN (CN); WANG HAIBO (CN); WANG JUN (CN); YAN DONGHANG (CN); ZHANG JIAN (CN) | 主分类号 | H01L35/24 | IPC主分类号 | H01L35/24;H01L51/40 | 专利有效期 | Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof 至Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof | 法律状态 | 说明书摘要 | A organic semiconductor field effect transistor that can work in the depletion mode or super-inverse mode, comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate electrode (2), a first semiconductor layer (4) formed on the gate insulation layer (3), a source electrode and a drain electrode (5) formed on the first semiconductor layer (4), and a second semiconductor layer (6) formed on the first semiconductor layer (4) and the source/drain electrodes (5). |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障